Datasheet > SI2318DS-T1-GE3

SI2318DS-T1-GE3

更新时间： 2024-11-30 22:57:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	155K
描述
MOSFET N-CH 40V 3A SOT-23

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SI2318DS-T1-GE3 数据手册

Si2318DS

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET^®Power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3.9

0.045 at V_GS= 10 V

0.058 at V_GS= 4.5 V

3.5

APPLICATIONS

•

Stepper Motors

•

Load Switch

TO-236

(SOT-23)

Top View

Si2318DS( C8)*

*Marking Code

Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free)

Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

_A= 70 °C

3.9

3.1

3.0

2.4

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^{a, b}

I_DM

I_S

0.8

T_A= 25 °C

T_A= 70 °C

1.25

0.8

0.75

0.48

Power Dissipation^{a, b}

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

100

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

120

166

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Pulse width limited by maximum junction temperature

Document Number: 72322

S09-0130-Rev. B, 02-Feb-09

www.vishay.com

12 3 4 5 6 7

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SI2318DS-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SI2318DS-T1-E3	VISHAY	类似代替	TRANSISTOR 3000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACK

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