SI2317
LOW VOLTAGE MOSFET (P-CHANNEL)
FEATURES
VDS=-30V,RDS(ON)≤80mΩ@VGS=-12V,ID=-3.1A
Low on-resistance
For DC to DC converter and Load switch applications
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-source voltage
V
DS
-30
±12
-3.1
-12
-1
V
V
Gate-source voltage
VGS
ID
Continuous drain current
A
Pulsed drain current
IDM
IS
A
Continuous Source-Drain Diode current
Power dissipation
A
PD
1.25
100
150
W
Thermal resistance from Junction to ambient
Junction temperature
RθJA
TJ
°C/W
°C
°C
Storage temperature
TSTG
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbo
Parameter
Min
Typ
Max Unit
Conditions
VGS=0V, ID=-250μA
V(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage(note 1)
-30
V
VDS=-30V,
VDS=0V,
uA
nA
V
IDSS
IGSS
-1
±100
-1.2
80
VGS=0V
VGS=±12V
VDS=VGS, ID=-250μA
VGS=-10V, ID=-3.0A
VGS=-4.5V, ID=-1.5A
VGS=-2.5V, ID=-1.0A
VGS(th)
-0.5
63
70
86
660
90
65
11
6
mΩ
Drain-source on-resistance (note 1)
m
Ω
RDS(ON)
90
120
mΩ
pF
pF
pF
nS
nS
nS
nS
nC
Input capacitance(note 1)
Output capacitance(note 1)
Reverse transfer capacitance(note 1)
Turn-on delay time(note 1)
Turn-on rise time(note 1)
Turn-off delay time(note 1)
Turn-off fall time(note 1)
Ciss
Coss
Crss
td(on)
tr
VDS=-15V, VGS=0V, f=1MHz
22
12
66
14
9.1
VDD=-15V,ID=-1A,
VGEN=-4.5V,Rg=6Ω
td(off)
tf
33
7
Total gate charge(note 1)
Gate-source charge(note 1)
Gate-drain charge(note 1)
Diode forward voltage (note 1)
Qg
7
Qgs
Qgd
VSD
0.9
2.3
nC VDS=-15V,VGS=-4.5V,ID=-3A
nC
IS=-1.0A, VGS=0V
-1.2
V
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .
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