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SI2317 PDF预览

SI2317

更新时间: 2024-11-18 18:09:27
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 733K
描述
SOT-23

SI2317 数据手册

 浏览型号SI2317的Datasheet PDF文件第2页浏览型号SI2317的Datasheet PDF文件第3页浏览型号SI2317的Datasheet PDF文件第4页浏览型号SI2317的Datasheet PDF文件第5页 
SI2317  
LOW VOLTAGE MOSFET (P-CHANNEL)  
FEATURES  
VDS=-30V,RDS(ON)≤80mΩ@VGS=-12V,ID=-3.1A  
Low on-resistance  
For DC to DC converter and Load switch applications  
Surface Mount device  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Drain-source voltage  
V
DS  
-30  
±12  
-3.1  
-12  
-1  
V
V
Gate-source voltage  
VGS  
ID  
Continuous drain current  
A
Pulsed drain current  
IDM  
IS  
A
Continuous Source-Drain Diode current  
Power dissipation  
A
PD  
1.25  
100  
150  
W
Thermal resistance from Junction to ambient  
Junction temperature  
RθJA  
TJ  
°C/W  
°C  
°C  
Storage temperature  
TSTG  
-55 ~+150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Symbo  
Parameter  
Min  
Typ  
Max Unit  
Conditions  
VGS=0V, ID=-250μA  
V(BR)DSS  
Drain-Source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
Gate-threshold voltage(note 1)  
-30  
V
VDS=-30V,  
VDS=0V,  
uA  
nA  
V
IDSS  
IGSS  
-1  
±100  
-1.2  
80  
VGS=0V  
VGS=±12V  
VDS=VGS, ID=-250μA  
VGS=-10V, ID=-3.0A  
VGS=-4.5V, ID=-1.5A  
VGS=-2.5V, ID=-1.0A  
VGS(th)  
-0.5  
63  
70  
86  
660  
90  
65  
11  
6
mΩ  
Drain-source on-resistance (note 1)  
m
Ω
RDS(ON)  
90  
120  
mΩ  
pF  
pF  
pF  
nS  
nS  
nS  
nS  
nC  
Input capacitance(note 1)  
Output capacitance(note 1)  
Reverse transfer capacitance(note 1)  
Turn-on delay time(note 1)  
Turn-on rise time(note 1)  
Turn-off delay time(note 1)  
Turn-off fall time(note 1)  
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS=-15V, VGS=0V, f=1MHz  
22  
12  
66  
14  
9.1  
VDD=-15V,ID=-1A,  
VGEN=-4.5V,Rg=6Ω  
td(off)  
tf  
33  
7
Total gate charge(note 1)  
Gate-source charge(note 1)  
Gate-drain charge(note 1)  
Diode forward voltage (note 1)  
Qg  
7
Qgs  
Qgd  
VSD  
0.9  
2.3  
nC VDS=-15V,VGS=-4.5V,ID=-3A  
nC  
IS=-1.0A, VGS=0V  
-1.2  
V
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .  
1 / 5  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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