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SI2318A-TP PDF预览

SI2318A-TP

更新时间: 2024-11-17 20:35:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 920K
描述
Power Field-Effect Transistor,

SI2318A-TP 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

SI2318A-TP 数据手册

 浏览型号SI2318A-TP的Datasheet PDF文件第2页浏览型号SI2318A-TP的Datasheet PDF文件第3页浏览型号SI2318A-TP的Datasheet PDF文件第4页 
SI2318A  
Features  
Trench Power LV MOSFET Technology  
High Power and Current Handing Capability  
Epoxy Meets UL 94 V-0 Flammability Rating  
Moisture Sensitivity Level 1  
N-Channel MOSFET  
• Halogen Free Available Upon Request By Adding Suffix "-HF"  
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
• Operating Junction Temperature Range: -55°C to +150°C  
• Storage Temperature Range: -55°C to +150°C  
• Thermal Resistance: 104°C/W Junction to Ambient(Note 1)  
SOT-23  
A
Parameter  
Drain-Source Voltage  
Rating  
40  
Unit  
V
Symbol  
VDS  
D
3
1
Gate-Source Voltage  
VGS  
±20  
V
B
C
Drain Current-Continuous  
2
ID  
5.0  
TA=25°C @ Steady State  
TA=70°C @ Steady State  
A
F
E
4.0  
Drain Current-Pulsed(Note 2)  
IDM  
20  
A
H
G
J
Power Dissipation  
PD  
1.2  
W
L
K
DIMENSIONS  
MM  
Internal Structure  
INCHES  
DIM  
NOTE  
MIN MAX MIN MAX  
0.110 0.120 2.80 3.04  
0.083 0.104 2.10 2.64  
0.047 0.055 1.20 1.40  
0.034 0.041 0.85 1.05  
0.067 0.083 1.70 2.10  
0.018 0.024 0.45 0.60  
D
A
B
C
D
E
F
G
H
J
1. *$7E  
2. 6285&(  
3. '5$,1  
G
Marking Code: 4005.  
0.01 0.15  
0.0004 0.006  
S
0.035 0.043 0.90 1.10  
0.003 0.007 0.08 0.18  
0.012 0.020 0.30 0.51  
K
L
0.020  
0.50  
0.007  
0.20  
Suggested Solder Pad Layout  
0.031  
0.800  
0.035  
0.900  
0.079  
2.000  
inches  
mm  
0.037  
0.950  
0.037  
0.950  
Rev.3-1-01012019  
1/4  
MCCSEMI.COM  

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