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SI2318CDS PDF预览

SI2318CDS

更新时间: 2024-02-03 18:48:22
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 235K
描述
N-Channel 40 V (D-S) MOSFET

SI2318CDS 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.66
Base Number Matches:1

SI2318CDS 数据手册

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New Product  
Si2318CDS  
Vishay Siliconix  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) ()  
Qg (Typ.)  
I
D (A)a  
Definition  
TrenchFET® Power MOSFET  
100 % Rg Tested  
0.042 at VGS = 10 V  
0.051 at VGS = 4.5 V  
5.6  
5.1  
40  
2.9 nC  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
DC/DC Converters  
Load Switch  
Portable and Consumer Applications  
SOT-23  
D
(3)  
G
S
1
Marking Code  
P9 XXX  
3
D
Lot Traceability  
and Date Code  
G
2
(1)  
Part # Code  
(2)  
Top View  
S
Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
40  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
5.6a  
4.5  
4.3b, c  
3.5b, c  
20  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
TA = 70 °C  
Pulsed Drain Current  
IDM  
IS  
T
C = 25 °C  
TA = 25 °C  
C = 25 °C  
1.75  
1.04b, c  
2.1  
Continuous Source-Drain Diode Current  
T
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
1.3  
1.25b, c  
0.8b, c  
Maximum Power Dissipation  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
80  
Maximum  
100  
Unit  
Maximum Junction-to-Ambientb, d  
t 5 s  
Steady State  
°C/W  
Maximum Junction-to-Foot (Drain)  
40  
60  
Notes:  
a. Based on TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under steady state conditions is 125 °C/W.  
Document Number: 67030  
S10-2250-Rev. A, 04-Oct-10  
www.vishay.com  
1

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