Datasheet > SI2318CDS

SI2318CDS

更新时间： 2024-11-17 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	235K
描述
N-Channel 40 V (D-S) MOSFET

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SI2318CDS 数据手册

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Si2318CDS

Vishay Siliconix

N-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^a

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.042 at V_GS= 10 V

0.051 at V_GS= 4.5 V

•

5.6

5.1

2.9 nC

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converters

Load Switch

Portable and Consumer Applications

SOT-23

(3)

Marking Code

P9 XXX

Lot Traceability

and Date Code

(1)

Part # Code

(2)

Top View

Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

5.6^a

4.5

4.3^{b, c}

3.5^{b, c}

_C= 25 °C

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

T_A= 25 °C

_C= 25 °C

1.75

1.04^{b, c}

2.1

Continuous Source-Drain Diode Current

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.3

1.25^{b, c}

0.8^{b, c}

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

100

Unit

Maximum Junction-to-Ambient^{b, d}

t  5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 67030

S10-2250-Rev. A, 04-Oct-10

www.vishay.com

12 3 4 5 6 7...10

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