New Product
Si2318CDS
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
Qg (Typ.)
I
D (A)a
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
0.042 at VGS = 10 V
0.051 at VGS = 4.5 V
•
•
5.6
5.1
40
2.9 nC
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
DC/DC Converters
Load Switch
Portable and Consumer Applications
SOT-23
D
(3)
G
S
1
Marking Code
P9 XXX
3
D
Lot Traceability
and Date Code
G
2
(1)
Part # Code
(2)
Top View
S
Ordering Information: Si2318CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
40
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
5.6a
4.5
4.3b, c
3.5b, c
20
T
T
T
C = 25 °C
C = 70 °C
A = 25 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
TA = 70 °C
Pulsed Drain Current
IDM
IS
T
C = 25 °C
TA = 25 °C
C = 25 °C
1.75
1.04b, c
2.1
Continuous Source-Drain Diode Current
T
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.3
1.25b, c
0.8b, c
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
80
Maximum
100
Unit
Maximum Junction-to-Ambientb, d
t 5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
40
60
Notes:
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 67030
S10-2250-Rev. A, 04-Oct-10
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