Datasheet > SI2318CDS

SI2318CDS

更新时间： 2024-01-23 14:26:05

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	235K
描述
N-Channel 40 V (D-S) MOSFET

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技术参数
数据手册

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SI2318CDS 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.66
Base Number Matches：	1

SI2318CDS 数据手册

New Product

Si2318CDS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

= 10 V thru 4 V

= - 55 °C

= 3 V

= 25 °C

= 125 °C

0.0

0.5

1.0

1.5

2.0

0.0

0.6

1.2

1.8

2.4

3.0

V_DS- Drain-to-Source Voltage (V)

V_GS- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

450

360

270

180

0.06

0.05

0.04

0.03

0.02

iss

= 4.5 V

= 10 V

oss

rss

I_D- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

V_DS- Drain-to-Source Voltage (V)

Capacitance

1.65

1.45

1.25

1.05

0.85

0.65

= 4.3 A

= 20 V

= 10 V; I = 4.3 A

= 10 V

= 32 V

= 4.5 V; I = 3.9 A

- 50 - 25

100 125 150

Q_g- Total Gate Charge (nC)

T_J- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

Gate Charge

Document Number: 67030

S10-2250-Rev. A, 04-Oct-10

www.vishay.com

1 234 5 6 7...10

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