Datasheet > SI2318DS

SI2318DS

更新时间： 2024-11-16 22:36:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	73K
描述
N-Channel 40-V (D-S) MOSFET

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SI2318DS 数据手册

Si2318DS

Vishay Siliconix

New Product

N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.045 @ V = 10 V

3.9

3.5

D Stepper Motors

D Load Switch

0.058 @ V = 4.5 V

TO-236

(SOT-23)

Ordering Information: Si2318DS-T1 (with Tape and Reel)

Top View

Si2318DS( C8)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

T = 25_C

3.9

3.1

3.0

2.4

a, b

Continuous Drain Current (T = 150_C)

T = 70_C

Pulsed Drain Current

a, b

Continuous Source Current (Diode Conduction)

0.8

T = 25_C

1.25

0.8

0.75

0.48

a, b

Power Dissipation

T = 70_C

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

120

100

166

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Document Number: 72322

S-31731—Rev. A, 18-Aug-03

www.vishay.com

12 3 4

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