Datasheet > SI2318

SI2318

更新时间： 2024-11-18 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	423K
描述
SOT-23

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数据手册

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SI2318 数据手册

SI2318

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 V_DS=40V,R_DS(ON)≤45mΩ@V_GS=10V,I_D=3.9A

 Ultra Low on-resistance

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23 (Marking: S18)

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

Unit

Gate-source voltage

V_GS

I_D

±20

Continuous drain current

T_A=25°C

T_A=70°C

3.9

I_D

3.1

Pulsed drain current (Note 1)

I_DM

I_S

Continuous Source Current (Diode Conduction)

Power dissipation

0.8

P_D

R_θJA

T_J

1.25

100

Thermal resistance from Junction to ambient

Junction temperature

°C/W

°C

150

Storage temperature

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage (note 1)

On-State Drain Current

μA V_DS=32V,

I_DSS

VGS=0V

I_GSS

±100 nA V_DS=0V,

VGS=±20V

V_GS(th)

I_D(ON)

V^DS=V^GS, I^D=250μA

≥4.5V,

V_DS

^GS=10V, I^D=3.9A

VGS=10V

540

1.6

2.1

0.8

62.5

mΩ

Drain-source on-resistance (note 1)

R_DS(ON)

VGS=4.5V, ID=3.5A

VDS=10V, ID=3.9A

Forward transconductance (note 1)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

V_{DS=20V, VGS=0V, f=1MHz}

VDS=20V, VGEN=10V,

RL=20Ω, ID=1A,RG=6Ω

Q_gs

Q_gd

V_SD

nC VDS=20V,VGS=10V,ID=3.9A

Gate-drain charge

Diode forward voltage (note 1)

IS=1.25A, VGS=0V

1.2

Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .

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