是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 7.81 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 1438557 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | MOSFET (N-Channel) |
Samacsys Package Category: | SOT23 (3-Pin) | Samacsys Footprint Name: | -SOT-23 |
Samacsys Released Date: | 2020-01-05 03:22:21 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 4.5 A | 最大漏极电流 (ID): | 3.9 A |
最大漏源导通电阻: | 0.05 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.66 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Powers |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI2316DS | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET | |
SI2316DS-E3 | VISHAY |
获取价格 |
TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET | |
SI2316DS-T1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
SI2316DS-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACK | |
SI2316DS-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND RO | |
SI2317 | HOTTECH |
获取价格 |
SOT-23 | |
SI2317A | UMW |
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种类:P-Channel;漏源电压(Vdss):-20V;持续漏极电流(Id)(在25°C | |
SI2318 | HOTTECH |
获取价格 |
SOT-23 | |
SI2318A | MCC |
获取价格 |
Tape: 3K/Reel, 120K/Ctn.; | |
SI2318A | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):40V;持续漏极电流(Id)(在25°C时 |