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SI2316BDS-T1-GE3 PDF预览

SI2316BDS-T1-GE3

更新时间: 2024-11-17 12:27:47
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
9页 221K
描述
N-Channel 30-V (D-S) MOSFET

SI2316BDS-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.81Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:1438557
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:-SOT-23
Samacsys Released Date:2020-01-05 03:22:21Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):4.5 A最大漏极电流 (ID):3.9 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.66 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI2316BDS-T1-GE3 数据手册

 浏览型号SI2316BDS-T1-GE3的Datasheet PDF文件第2页浏览型号SI2316BDS-T1-GE3的Datasheet PDF文件第3页浏览型号SI2316BDS-T1-GE3的Datasheet PDF文件第4页浏览型号SI2316BDS-T1-GE3的Datasheet PDF文件第5页浏览型号SI2316BDS-T1-GE3的Datasheet PDF文件第6页浏览型号SI2316BDS-T1-GE3的Datasheet PDF文件第7页 
Si2316BDS  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
ID (A)a  
4.5  
Definition  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ)  
TrenchFET® Power MOSFET  
PWM Optimized  
0.050 at VGS = 10 V  
0.080 at VGS = 4.5 V  
3.16 nC  
30  
3.4  
100 % R tested  
g
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
Battery Switch  
DC/DC Converter  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2316DS (M6)*  
*Marking Code  
Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)  
Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Unit  
Parameter  
Symbol  
Limit  
30  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
T
C = 25 °C  
C = 70 °C  
4.5  
3.6  
Continuous Drain Current (TJ = 150 °C)  
ID  
3.9b, c  
3.13b, c  
20  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
1.39  
1.04b, c  
1.66  
Continuous Source-Drain Diode Current  
T
C = 70 °C  
1.06  
W
Maximum Power Dissipation  
PD  
1.25b, c  
0.8b, c  
- 55 to 150  
TA = 25 °C  
TA = 70 °C  
°C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
80  
Maximum  
Unit  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
5 s  
Steady State  
100  
75  
°C/W  
RthJF  
60  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 moard.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 130 °C/W.  
Document Number: 70445  
S09-1503-Rev. B, 10-Aug-09  
www.vishay.com  
1

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