SI2315BDS

更新时间： 2024-09-12 22:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	62K
描述
P-Channel 1.8-V (G-S) MOSFET

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SI2315BDS 数据手册

Si2315BDS

Vishay Siliconix

P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.050 @ V = -4.5 V

-3.85

-3.4

0.065 @ V = -2.5 V

-12

0.100 @ V = -1.8 V

-2.7

TO-236

(SOT-23)

Ordering Information: Si2315BDS-T1

Top View

Si2315BDS *(M5)

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-12

T = 25_C

-3.85

-3.0

Continuous Drain Current (T = 150_C)

T = 70_C

-2.45

Pulsed Drain Current

-12

Continuous Source Current (Diode Conduction)

-1.0

1.19

0.76

-0.62

0.75

0.48

T = 25_C

Power Dissipation

T = 70_C

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ꢀ 5 sec.

130

105

166

Maximum Junction-to-Ambient

thJA

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on FR4 Board.

b. t v5 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72014

S-31990—Rev. D, 13-Oct-03

www.vishay.com

12 3 4 5

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