Datasheet > SI2312A

SI2312A

更新时间： 2024-09-16 14:55:07

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	1022K
描述
Tape: 3K/Reel, 120K/Ctn.;

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数据手册

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SI2312A 数据手册

SI2312A

Features

• TrenchFET Power MOSFET

• Epoxy Meets UL 94 V-0 Flammability Rating

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^{(Note 1)}

N-Channel MOSFET

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

• Operating Junction Temperature Range: -55°C to +150°C

• Storage Temperature Range: -55°C to +150°C

SOT-23

• Thermal Resistance: 357°C/W Junction to Ambient

Parameter

Drain-Source Voltage

Rating

Unit

Symbol

V_DS

Gate-Source Voltage

V_GS

±8

I_D

I_S

5.0

Drain Current-Continuous

Source-Dra in Diode Current-Continuous

Power Dissipation

1.04

1.2

P_D

Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

DIMENSIONS

INCHES

Internal Structure and Marking Code

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

1. *$7E

2. 6285&(

3. '5$,1

S12.

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

0.020

0.50

0.007

0.20

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.3-4-04092022

1/4

MCCSEMI.COM

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与SI2312A相关器件

型号	品牌	获取价格	描述	数据表
SI2312B	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
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SI2312CDS	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SI2312CDS-T1-GE3	VISHAY	获取价格	TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI2312DS	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SI2312DS (KI2312DS)	KEXIN	获取价格	N-Channel MOSFET
SI2312DS_05	VISHAY	获取价格	N-Channel 20 -V (D-S) MOSFET
SI2312DS-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI2312DS-T1	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SI2312DS-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET