Datasheet > SI2312B

SI2312B

更新时间： 2024-09-16 14:54:39

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	1033K
描述
Tape: 3K/Reel, 120K/Ctn.;

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2312B 数据手册

SI2312B

Features

• High Power and Current Handing Capability

• Epoxy Meets UL 94 V-0 Flammability Rating

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^{(Note 1)}

N-Channel MOSFET

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

• Operating Junction Temperature Range: -55°C to +150°C

• Storage Temperature Range: -55°C to +150°C

• Thermal Resistance: 100°C/W Junction to Ambient^{(Note 2)}

SOT-23

Parameter

Drain-Source Voltage

Rating

Unit

Symbol

V_DS

Gate-Source Voltage

V_GS

±10

T_A=25^oC

T_A=70^oC

6.8

5.4

Drain Current-Continuous

I_D

Drain Current-Pulsed^{(Note 3)}

I_DM

Power Dissipation

P_D

1.25

Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

DIMENSIONS

INCHES

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

Internal Structure and Marking Code

1. *$7E

2. 6285&(

3. '5$,1

S12.

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

0.020

0.50

0.007

0.20

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.3-6-08292022

1/4

MCCSEMI.COM

12 3 4

中文翻译

下载PDF

与SI2312B相关器件

型号	品牌	获取价格	描述	数据表
SI2312BDS	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SI2312CDS	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SI2312CDS-T1-GE3	VISHAY	获取价格	TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI2312DS	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SI2312DS (KI2312DS)	KEXIN	获取价格	N-Channel MOSFET
SI2312DS_05	VISHAY	获取价格	N-Channel 20 -V (D-S) MOSFET
SI2312DS-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI2312DS-T1	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SI2312DS-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI2312HE3	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;