Datasheet > SI2312A

SI2312A

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		栅栅极
页数	文件大小	规格书
5页	1764K
描述
漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:6A;栅极-源极阈值电压:850mV @ 250uA;漏源导通电阻:26mΩ@4.5V;最大功耗（Ta = 25°C）:750mW;种类:N-Channel;漏源导通电阻:mΩ@10V

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数据手册

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SI2312A 数据手册

UMW

UMW SI2312A

■ Features

SOT–23

● VDS (V) = 20V

● ID = 6 A (VGS =4.5V)

● RDS(ON) ＜ 26mΩ (VGS = 4.5V)

● RDS(ON) ＜ 33mΩ (VGS = 2.5V)

● RDS(ON) ＜ 50mΩ (VGS = 1.8V)

1. GATE

2. SOURCE

3. DRAIN

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

5 sec

Steady State

Unit

±8

Gate-Source Voltage

VGS

Ta=25℃

Ta=70℃

Continuous Drain Current *1

Pulsed Drain Current

Avalanche Current

IDM

IAS

L=0.1mH

11.25

Single Avalanche Energy

EAS

1.25

0.8

0.75

0.48

Ta=25℃

Ta=70℃

Power Dissipation *1

100

166

Thermal Resistance.Junction- to-Ambient *1 t≤5 sec

Steady State

thJA

thJF

℃/W

Thermal Resistance.Junction-to-Foot

Junction Temperature

150

℃

Storage Temperature Range

-55 to 150

stg

*1 Surface Mounted on 1” x 1” FR4 Board.

*2 Pulse width limited by maximum junction temperature

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