型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI2312A | MCC |
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Tape: 3K/Reel, 120K/Ctn.; | |
SI2312A | UMW |
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漏源电压(Vdss):20V;持续漏极电流(Id)(在25°C时):6A;栅极-源极阈值电 | |
SI2312B | MCC |
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Tape: 3K/Reel, 120K/Ctn.; | |
SI2312BDS | VISHAY |
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N-Channel 20-V (D-S) MOSFET | |
SI2312CDS | VISHAY |
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N-Channel 20 V (D-S) MOSFET | |
SI2312CDS-T1-GE3 | VISHAY |
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TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI2312DS | VISHAY |
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N-Channel 20-V (D-S) MOSFET | |
SI2312DS (KI2312DS) | KEXIN |
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N-Channel MOSFET | |
SI2312DS_05 | VISHAY |
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N-Channel 20 -V (D-S) MOSFET | |
SI2312DS-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |