Datasheet > SI2310K

SI2310K

更新时间： 2024-11-21 17:01:59

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	1142K
描述
Tape: 3K/Reel, 120K/Ctn.;

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中文翻译

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数据手册

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SI2310K 数据手册

SI2310K

Features

•

Trench LV MOSFET Technology

High Density Cell Design For Ultra Low R_DS(on)

ESD Protect up to 1.2KV（HBM）

Moisture Sensitivity Level 1

Halogen Free."Green"Device^(Note1)

Epoxy Meets UL 94 V-0 Flammability Rating

N-CHANNEL

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

MOSFET

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

•

Thermal Resistance: 100°C/W Junction to Ambient ^{(Note 2)}

Parameter

Rating

Symbol

V_DS

Unit

SOT-23

Drain-Source Voltage

Gate-Source Volltage

V_GS

±20

2.5

T_A=25°C

I_D

Continuous Drain Current

Pulsed Drain Current ^{(Note 3)}

T_A=100°C

1.6

I_DM

P_D

Total Power Dissipation ^{(Note 4)}

1.3

Note:

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

2. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz.

DIMENSIONS

Copper, in a still air environment with T_A=25°C.

INCHES

3. Repetitive rating; pulse width limited by max. junction temperature.

DIM

NOTE

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

4. P_Dis based on max. junction temperature, using junction-ambient thermal resistance.

Internal Structure and Marking Code

0.01 0.15

0.0004 0.006

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.012 0.020 0.30 0.51

1. GATE

2. SOURCE

3. DRAIN

0.020

0.50

0.007

0.20

10K

Suggested Solder Pad Layout

0.031

0.800

0.035

0.900

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.4-1-01232024

1/6

MCCSEMI.COM

12 3 4 5 6

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