Datasheet > SI2311

SI2311

更新时间： 2024-11-19 18:09:31

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	544K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2311 数据手册

SI2311

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-8V,R_DS(ON)≤45mΩ@V_GS=-4.5V,I_D=-3.0A

 Low on-resistance

 For DC to DC converter and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

-8

Unit

Gate-source voltage

Continuous drain current

Pulsed drain current

Continuous Source-Drain Diode current

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

V_GS

I_D

I_DM

I_S

P_D

R_θJA

T_J

±8

-3.0

-10

-0.6

0.71

175

150

°C/W

°C

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Symbo

V(BR)DSS

Min

-8

Typ

Max Unit

Conditions

V^GS=0V, I^D=-10μA

-1

-10

V_DS=-6.4V,

VGS=0V

V^GS=0V,T^J=55°C

Zero gate voltage drain current

I_DSS

Gate-body leakage current

Gate-threshold voltage

I_GSS

V_GS(th

±100

-0.8

nA V_DS=0V,

VGS=±8V

VDS=VGS, ID=-250μA

-0.45

-6

-3

V_DS≤-5V,

V^GS=-4.5V

VGS=-2.5V

On-state Drain Current

I_D(on)

120

VGS=-4.5V, ID=-3.5A

VGS=-2.5V, ID=-3A

V^GS=-1.8V, I^D=-0.7A

VDS=-5V, ID=-3.5A

mΩ

Drain-source on-resistance (note 1)

R_DS(ON)

Forward transconductance (note 1)

Input capacitance(note 1)

Output capacitance(note 1)

Reverse transfer capacitance(note 1)

Turn-on delay time(note 1)

Turn-on rise time(note 1)

Turn-off delay time(note 1)

Turn-off fall time(note 1)

Total gate charge(note 1)

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

970

485

160

V_{DS=-4V, VGS=0V, f=1MHz}

VDD=-4V,ID=-1A,

VGEN=-4.5V,Rg=6Ω,RL=4Ω

8.5

1.5

2.1

Gate-source charge(note 1)

Gate-drain charge(note 1)

Diode forward voltage (note 1)

Q_gs

Q_gd

V_SD

nC VDS=-4V,VGS=-4.5V,ID=-3.5A

-1.2

IS=-0.8A, VGS=0V

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 5

E-mail:hkt@heketai.com

12 3 4 5

中文翻译

下载PDF

与SI2311相关器件

型号	品牌	获取价格	描述	数据表
SI2311DS	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET
SI2311DS-E3	VISHAY	获取价格	TRANSISTOR 3000 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET G
SI2311DS-T1-E3	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET
SI2311DS-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor,
SI2312	HTSEMI	获取价格	20 V N-Channel Enhancement Mode MOSFET
SI2312	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
SI2312	HC	获取价格	SOT-23-3L
SI2312	HOTTECH	获取价格	SOT-23
SI2312A	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
SI2312A	UMW	获取价格	漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:6A;栅极-源极阈值电