Datasheet > SI2312

SI2312

更新时间： 2024-11-18 09:26:15

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
页数	文件大小	规格书
3页	1878K
描述
20 V N-Channel Enhancement Mode MOSFET

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SI2312 数据手册

SI2312

20V N-Channel Enhancement Mode MOSFET

VDS= 20V

RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ

RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ

RDS(ON), Vgs@1.8V, Ids@3.9A < 85mΩ

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Package Dimensions

SOT-23-3L

Millimeter

REF.

Min.

Max.

3.10

2.95

1.70

0.50

0.10

Min.

Max.

2.70

2.65

1.50

0.35

1.90 REF.

1.00

0.10

0.40

0.85

1.30

0.20

1.15

0.45

0.55

0°

10°

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

+ 8

4.9

I_DM

TA = 25^oC

TA = 75^oC

0.75

0.48

-55 to 150

140

Maximum Power Dissipation

P_D

^oC

^oC/W

T_J, T_stg

R_qJA

Operating Junction and Storage Temperature Range

Junction-to-Ambient Thermal Resistance (PCB mounted)

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

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与SI2312相关器件

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