是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.71 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 65 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 90 A |
最大漏源导通电阻: | 0.0057 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 360 A | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PSMN028-100YS | NXP |
类似代替 ![]() |
N-channel LFPAK 100V 27.5 mΩ standard level M |
![]() |
PSMN030-60YS | NXP |
功能相似 ![]() |
N-channel LFPAK 60 V 24.7 mΩ standard level M |
![]() |
PSMN014-40YS | NXP |
功能相似 ![]() |
N-channel LFPAK 40 V, 14 mΩ standard level MO |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN5R8-40YS,115 | NXP |
获取价格 |
PSMN5R8-40YS - N-channel LFPAK 40 V 5.7 mΩ st |
![]() |
PSMN6R0-25YLB | NXP |
获取价格 |
N-channel 25 V 6.1 mΩ logic level MOSFET in |
![]() |
PSMN6R0-25YLB | NEXPERIA |
获取价格 |
N-channel 25 V 6.1 mΩ logic level MOSFET in L |
![]() |
PSMN6R0-25YLB,115 | NXP |
获取价格 |
PSMN6R0-25YLB - N-channel 25 V 6.1 mΩ logic l |
![]() |
PSMN6R0-25YLC | NXP |
获取价格 |
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) |
![]() |
PSMN6R0-25YLD | NEXPERIA |
获取价格 |
N-channel 25 V, 6.75 mΩ logic level MOSFET in |
![]() |
PSMN6R0-30YL | NXP |
获取价格 |
N-channel TrenchMOS logic level FET |
![]() |
PSMN6R0-30YL,115 | NXP |
获取价格 |
PSMN6R0-30YL - N-channel 30 V 6 mΩ logic leve |
![]() |
PSMN6R0-30YL_10 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET |
![]() |
PSMN6R0-30YLB | NXP |
获取价格 |
71A, 30V, 0.0081ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER SO8, LFPAK-4 |
![]() |