Datasheet > PSMN6R5-80PS,127

PSMN6R5-80PS,127

更新时间： 2024-09-14 15:48:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	208K
描述
PSMN6R5-80PS - N-channel 80V 6.9mΩ standard level MOSFET in TO220 TO-220 3-Pin

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PSMN6R5-80PS,127 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-220
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

PSMN6R5-80PS,127 数据手册

PSMN6R5-80PS

N-channel 80 V 6.9 mΩ standard level MOSFET in TO220

Rev. 02 — 1 November 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

210

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

[2]

V_GS= 10 V; I_D= 15 A;

T_j= 25 °C; see Figure 13

5.9

6.9

mΩ

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A;

V_DS= 40 V; see Figure 14;

see Figure 15

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 49 A; V_sup≤ 80 V;

R_GS= 50 Ω; unclamped

700 mJ

[1] Continuous current rating is limited by package.

[2] Measured 3 mm from package.

12 3 4 5 6 7...15

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