Datasheet > PSMN7R0-30MLC,115

PSMN7R0-30MLC,115

更新时间： 2024-11-21 18:46:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	345K
描述
PSMN7R0-30MLC - N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

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中文翻译

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技术参数
数据手册

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PSMN7R0-30MLC,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
针数：	8	Reach Compliance Code：	not_compliant
风险等级：	5.74	Base Number Matches：	1

PSMN7R0-30MLC,115 数据手册

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PSMN7R0-30MLC

AK33

LFP

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using

NextPower Technology

Rev. 4 — 15 June 2012

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 Low parasitic inductance and

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j= 25 °C

I_D

T_mb= 25 °C; V_GS= 10 V; see Figure 1

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

see Figure 10

7.8

mΩ

V_GS= 10 V; I_D= 15 A; T_j= 25 °C;

see Figure 10

6.05

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 4.5 V; I_D= 15 A; V_DS= 15 V;

see Figure 12; see Figure 13

Q_G(tot)

total gate charge

V_GS= 4.5 V; I_D= 15 A; V_DS= 15 V;

see Figure 12; see Figure 13

8.2

12 3 4 5 6 7...14

中文翻译

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