Datasheet > PSMN6R8-40HS

PSMN6R8-40HS

更新时间： 2024-11-22 11:16:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	281K
描述
N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technologyProduction

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PSMN6R8-40HS 数据手册

PSMN6R8-40HS

N-channel 40 V, 6.8 mOhm, standard level MOSFET in

LFPAK56D using TrenchMOS technology

19 October 2022

Product data sheet

1. General description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using

TrenchMOS technology.

2. Features and benefits

•

Dual MOSFET

•

Repetitive avalanche rated

High reliability LFPAK56D package

Copper-clip, solder die attach

Qualified to 175 °C

3. Applications

•

Brushless DC motor control

DC-to-DC converters

High-performance synchronous rectification

High performance and high efficiency server power supply

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics FET1 and FET2

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 12

5.8

6.8

mΩ

V_GS= 10 V; I_D= 20 A; T_j= 175 °C;

Fig. 12; Fig. 13

13.4

Dynamic characteristics FET1 and FET2

Q_GD

gate-drain charge

I_D= 20 A; V_DS= 32 V; V_GS= 20 V;

T_j= 25 °C; Fig. 14; Fig. 15

9.1

Q_G(tot)

total gate charge

I_D= 20 A; V_DS= 32 V; V_GS= 10 V;

T_j= 25 °C; Fig. 14; Fig. 15

28.9

Avalanche ruggedness FET1 and FET2

E_DS(AL)S

non-repetitive drain-

source avalanche

energy

I_D= 40 A; V_sup≤ 40 V; V_GS= 10 V;

T_j(init)= 25 °C; Fig. 4

[1] [2]

130

12 3 4 5 6 7...12

中文翻译

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