Datasheet > PSMN5R8-40YS,115

PSMN5R8-40YS,115

更新时间： 2024-09-14 15:48:27

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
15页	209K
描述
PSMN5R8-40YS - N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET SOIC 4-Pin

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技术参数
数据手册

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PSMN5R8-40YS,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	5.75
Base Number Matches：	1

PSMN5R8-40YS,115 数据手册

PSMN5R8-40YS

N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET

Rev. 03 — 25 October 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC convertors

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A;

T_j= 100 °C; see Figure 12

7.7

5.7

mΩ

V_GS= 10 V; I_D= 15 A;

4.4

T_j= 25 °C; see Figure 13

12 3 4 5 6 7...15

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