Datasheet > PSMN6R1-25MLD

PSMN6R1-25MLD

更新时间： 2024-11-22 11:13:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	722K
描述
N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 TechnologyProduction

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PSMN6R1-25MLD 数据手册

PSMN6R1-25MLD

N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33

using NextPowerS3 Technology

6 April 2016

Product data sheet

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers

high efficiency, low spiking performance usually associated with MOSFETS with an

integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching

frequencies.

2. Features and benefits

Ultra low Q_G, Q_GDand Q_OSSfor high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at

25 °C

•

Optimised for 4.5 V gate drive

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,

no wire bonds, qualified to 175 °C

•

Exposed leads for optimal visual solder inspection

•

3. Applications

On-board DC:DC solutions for server and telecommunications

Secondary-side synchronous rectification in telecommunication applications

Voltage regulator modules (VRM)

Point-of-Load (POL) modules

Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

Brushed and brushless motor control

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

12 3 4 5 6 7...13

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