Datasheet > PSMN6R4-30MLD

PSMN6R4-30MLD

更新时间： 2024-09-15 11:15:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	288K
描述
N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 TechnologyProduction

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PSMN6R4-30MLD 数据手册

PSMN6R4-30MLD

N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

21 January 2019

Product data sheet

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The

NextPowerS3 portfolio, utilising Nexperia’s unique “SchottkyPlus” technology, delivers high

efficiency and the low spiking performance usually associated with MOSFETs with an integrated

Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is

particularly suited to high efficiency applications at high switching frequencies.

2. Features and benefits

•

Ultra low Q_G, Q_GDand Q_OSSfor high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C

Optimised for 4.5 V gate drive

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire

bonds, qualified to 175 °C

•

Exposed leads for optimal visual solder inspection

3. Applications

•

On-board DC-to-DC solutions for server and telecommunications

Secondary-side synchronous rectification in telecommunication applications

Voltage regulator modules (VRM)

Point-of-Load (POL) modules

Power delivery for V-core, ASIC, DDR, GPU, VGA and system components

Brushed and brushless motor control

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 4.5 V; I_D= 15 A; T_j= 25 °C;

Fig. 10

6.9

1.8

8.3

mΩ

I_D= 15 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

12 3 4 5 6 7...12

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