Datasheet > PSMN6R5-25YLC

PSMN6R5-25YLC

更新时间： 2024-09-15 11:15:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	898K
描述
N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction

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PSMN6R5-25YLC 数据手册

PSMN6R5-25YLC

N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 2 — 31 October 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

 Optimised for 4.5V Gate drive utilising

qualified to 175°C

NextPower Superjunction technology

 Low parasitic inductance and

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

resistance

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V; see Figure 1

T_mb= 25 °C; see Figure 2

P_tot

total power dissipation

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 20 A; T_j= 25 °C;

see Figure 12

7.3

5.5

8.5

6.5

mΩ

_GS= 10 V; I_D= 20 A; T_j= 25 °C;

see Figure 12

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 4.5 V; I_D= 20 A; V_DS= 12 V;

see Figure 14; see Figure 15

2.8

8.4

Q_G(tot)

12 3 4 5 6 7...15

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