Datasheet > PSMN6R0-30YLB,115

PSMN6R0-30YLB,115

更新时间： 2024-09-14 14:27:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	311K
描述
PSMN6R0-30YLB - N-channel 30 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin

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技术参数
数据手册

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PSMN6R0-30YLB,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	5.72	Base Number Matches：	1

PSMN6R0-30YLB,115 数据手册

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PSMN6R0-30YLB

LFP

N-channel 30 V 6.5 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 2 — 24 October 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

 Optimised for 4.5V Gate drive utilising

qualified to 175°C

NextPower Superjunction technology

 Low parasitic inductance and

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

resistance

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-55

175

°C

Static characteristics

R_DSon

drain-source on-state resistance V_GS= 4.5 V; I_D= 20 A; T_j= 25 °C;

see Figure 12

6.9

5.5

8.1

6.5

mΩ

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

see Figure 12

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 4.5 V; I_D= 20 A; V_DS= 15 V;

see Figure 14; see Figure 15

2.6

Q_G(tot)

total gate charge

V_GS= 4.5 V; I_D= 20 A; V_DS= 15 V;

see Figure 14; see Figure 15

12 3 4 5 6 7...15

中文翻译

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