是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, LFPAK-5 | 针数: | 235 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.72 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 23 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 29 A |
最大漏源导通电阻: | 0.0247 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MO-235 | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 116 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | PURE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PSMN014-40YS | NXP |
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N-channel LFPAK 40 V, 14 mΩ standard level MO |
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PSMN5R8-40YS | NEXPERIA |
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PH3855L,115 | NXP |
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PH3855L - N-channel TrenchMOS logic level FET SOIC 4-Pin |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN030-60YS,115 | NXP |
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PSMN030-60YS - N-channel LFPAK 60 V 24.7 mΩ s |
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PSMN030-60YS_1010 | NXP |
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N-channel LFPAK 60 V 24.7 mΩ standard level |
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PSMN033-100HL | NEXPERIA |
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N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technologyProduct |
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PSMN034-100BS | NXP |
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PSMN034-100BS | NEXPERIA |
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PSMN034-100BS,118 | NXP |
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PSMN034-100BS - N-channel 100 V 34.5 mΩ stand |
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PSMN034-100BS_15 | NXP |
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N-channel 100 V 34.5 mΩ standard level MOSFE |
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PSMN034-100PS | NXP |
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N-channel 100 V 34.5 mΩ standard level MOSFE |
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PSMN034-100PS | NEXPERIA |
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N-channel 100 V 34.5 mΩ standard level MOSFET |
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PSMN034-100PS,127 | NXP |
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PSMN034-100PS - N-channel 100 V 34.5 mΩ stand |
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