Datasheet > PSMN030-60YS,115

PSMN030-60YS,115

更新时间： 2024-01-30 19:05:16

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	205K
描述
PSMN030-60YS - N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET SOIC 4-Pin

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中文翻译

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技术参数
数据手册
替代型号

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PSMN030-60YS,115 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	5.76	Base Number Matches：	1

PSMN030-60YS,115 数据手册

PSMN030-60YS

N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET

Rev. 02 — 25 October 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

T_j

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

-55

175 °C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 15 A;

T_j= 100 °C; see Figure 12

39.5 mΩ

V_GS= 10 V; I_D= 15 A;

19.1 24.7 mΩ

T_j= 25 °C; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 15 A;

V_DS= 30 V; see Figure 14;

Q_G(tot)

see Figure 15

12 3 4 5 6 7...15

中文翻译

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PSMN030-60YS,115 替代型号

型号	品牌	替代类型	描述	数据表
HAT2266H-EL-E	RENESAS	功能相似	Silicon N Channel Power MOS FET Power Switching

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