是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
雪崩能效等级(Eas): | 42 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 32 A | 最大漏源导通电阻: | 0.0345 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 127 A | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN034-100BS,118 | NXP |
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PSMN034-100BS - N-channel 100 V 34.5 mΩ stand |
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PSMN034-100BS_15 | NXP |
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N-channel 100 V 34.5 mΩ standard level MOSFE |
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PSMN034-100PS | NXP |
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N-channel 100 V 34.5 mΩ standard level MOSFE |
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PSMN034-100PS | NEXPERIA |
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N-channel 100 V 34.5 mΩ standard level MOSFET |
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PSMN034-100PS,127 | NXP |
获取价格 |
PSMN034-100PS - N-channel 100 V 34.5 mΩ stand |
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PSMN035-150B | NXP |
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N-channel TrenchMOS transistor |
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PSMN035-150B,118 | NXP |
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N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin |
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PSMN035-150B/T3 | NXP |
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TRANSISTOR 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Gen |
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PSMN035-150P | NXP |
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N-channel TrenchMOS transistor |
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PSMN038 | NXP |
获取价格 |
N-channel enhancement mode field-effect transistor |
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