Datasheet > NTMS4916NR2G

NTMS4916NR2G

更新时间： 2024-09-16 10:30:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	109K
描述
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMS4916NR2G 数据手册

NTMS4916N

Power MOSFET

30 V, 11.6 A, N−Channel, SO−8

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Optimized for 5 V, 12 V Gate Drives

http://onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

9 mW @ 10 V

Applications

30 V

11.6 A

12 mW @ 4.5 V

• DC−DC Converters

• Printers

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

N−Channel

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Steady

State

T = 25°C

9.4

7.5

1.30

Current R

(Note 1)

T = 70°C

Power Dissipation R

(Note 1)

Steady

State

T = 25°C

Continuous Drain

Steady

State

T = 25°C

7.8

6.2

Current R

(Note 2)

MARKING DIAGRAM/

PIN ASSIGNMENT

T = 70°C

Power Dissipation R

(Note 2)

T = 25°C

0.89

Source

Gate

Drain

Continuous Drain

Steady

State

T = 25°C

11.6

9.3

SO−8

CASE 751

STYLE 12

Current R , t v 10 s

T = 70°C

(Note 1)

Top View

Power Dissipation

Steady

State

T = 25°C

1.98

, t v 10 s(Note 1)

4916N = Device Code

Pulsed Drain Current

T = 25°C, t = 10 ms

145

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Operating Junction and Storage Temperature

T ,

stg

−55 to

°C

150

Source Current (Body Diode)

2.5

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche Energy

40.5

(T = 25°C, V = 30 V, V = 10 V,

I = 9 A , L = 1.0 mH, R = 25 W)

ORDERING INFORMATION

†

Lead Temperature for Soldering Purposes

260

°C

Device

Package

Shipping

2500/Tape & Reel

(1/8″ from case for 10 s)

NTMS4916NR2G

SO−8

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol Value Unit

°C/W

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 10 s (Note 1)

Junction−to−Foot (Drain)

24.5

141

Junction−to−Ambient – Steady State (Note 2)

1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surfacemounted on FR4 board using the minimum recommended pad size.

Publication Order Number:

April, 2010 − Rev. 0

NTMS4916N/D

12 3 4 5

中文翻译

下载PDF

与NTMS4916NR2G相关器件

型号	品牌	获取价格	描述	数据表
NTMS4917N	ONSEMI	获取价格	Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4917NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 10.5 A, N?Channel, SO?8 Low RDS(on) to Minimize Conduction Losses
NTMS4920N	ONSEMI	获取价格	Power MOSFET 30 V, 17 A, N−Channel, SO−8
NTMS4920NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 17 A, N−Channel, SO−8
NTMS4935N	ONSEMI	获取价格	Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4935NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 16 A, N−Channel, SO−8
NTMS4937N	ONSEMI	获取价格	Power MOSFET Power MOSFET
NTMS4937NR2G	ONSEMI	获取价格	Power MOSFET Power MOSFET
NTMS4939N	ONSEMI	获取价格	Power MOSFET 30 V, 12.5 A, N−Channel, SO−8
NTMS4939NR2G	ONSEMI	获取价格	Power MOSFET 30 V, 12.5 A, N−Channel, SO−8

与NTMS4916NR2G相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMS4916NR2G

NTMS4916NR2G 数据手册

与NTMS4916NR2G相关器件

与NTMS4916NR2G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMS4916NR2G

NTMS4916NR2G 数据手册

与NTMS4916NR2G相关器件

与NTMS4916NR2G相关文章

您还可以找

您在本页遇到什么问题？