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NTMS4939NR2G

更新时间： 2024-11-20 05:54:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 132K
描述
Power MOSFET 30 V, 12.5 A, N−Channel, SO−8

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NTMS4939NR2G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT包装说明：SOIC-8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.73Samacsys Description：Power MOSFET 30 V 12.5 A N Channel SO-8
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：12.5 A最大漏极电流 (ID)：8 A
最大漏源导通电阻：0.0084 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON

NTMS4939NR2G 数据手册

 浏览型号NTMS4939NR2G的Datasheet PDF文件第2页浏览型号NTMS4939NR2G的Datasheet PDF文件第3页浏览型号NTMS4939NR2G的Datasheet PDF文件第4页浏览型号NTMS4939NR2G的Datasheet PDF文件第5页 
NTMS4939N  
Power MOSFET  
30 V, 12.5 A, N−Channel, SO−8  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Applications  
• DC−DC Converters  
• Points of Loads  
• Power Load Switch  
• Motor Controls  
8.4 mW @ 10 V  
11 mW @ 4.5 V  
30 V  
12.5 A  
N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
10.3  
8.3  
A
G
Current R  
(Note 1)  
q
JA  
T = 70°C  
A
Power Dissipation R  
(Note 1)  
Steady  
State  
T = 25°C  
P
1.35  
W
A
q
A
D
JA  
JA  
S
Continuous Drain  
Steady  
State  
I
D
T = 25°C  
A
8.0  
6.4  
0.8  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Current R  
(Note 2)  
q
JA  
T = 70°C  
A
1
8
Power Dissipation R  
(Note 2)  
T = 25°C  
A
P
I
W
A
q
D
Source  
Source  
Source  
Gate  
Drain  
Drain  
Drain  
Drain  
1
SO−8  
CASE 751  
STYLE 12  
Continuous Drain  
Steady  
State  
T = 25°C  
A
12.5  
10  
D
Current R , t v 10 s  
q
JA  
T = 70°C  
A
(Note 1)  
Top View  
Power Dissipation  
Steady  
State  
T = 25°C  
A
P
D
2.0  
W
R
q
, t v 10 s(Note 1)  
4939N = Device Code  
JA  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
100  
A
A
p
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
stg  
WW  
G
T
Source Current (Body Diode)  
I
S
2.0  
A
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
60.5  
mJ  
(T = 25°C, V = 30 V, V = 10 V,  
J
DD  
GS  
ORDERING INFORMATION  
I = 11 A , L = 1.0 mH, R = 25 W)  
L
pk  
G
†
Device  
Package  
Shipping  
2500/Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
NTMS4939NR2G  
SO−8  
(Pb−Free)  
THERMAL RESISTANCE MAXIMUM RATINGS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Parameter  
Symbol Value Unit  
°C/W  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t v 10 s (Note 1)  
Junction−to−Foot (Drain)  
R
R
92.7  
61.7  
q
q
JA  
JA  
R
R
23.5  
q
JF  
Junction−to−Ambient – Steady State (Note 2)  
155.6  
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces).  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
September, 2009 − Rev. 0  
NTMS4939N/D  
 
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