是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT |
包装说明: | LEAD FREE, CASE 751-07, SOIC-8 | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.33 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 2.3 A |
最大漏源导通电阻: | 0.09 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 175 pF | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTMSD3P102 | ONSEMI |
获取价格 |
Typical Uses for FETKY Devices |
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NTMSD3P102R2 | ONSEMI |
获取价格 |
P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Pac |
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NTMSD3P102R2/D | ETC |
获取价格 |
FETKY? |
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NTMSD3P102R2_06 | ONSEMI |
获取价格 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package |
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NTMSD3P102R2G | ONSEMI |
获取价格 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package |
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NTMSD3P102R2SG | ONSEMI |
获取价格 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package |
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NTMSD3P303 | ONSEMI |
获取价格 |
Typical Uses for FETKY Devices |
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NTMSD3P303R2 | ONSEMI |
获取价格 |
P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Pac |
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NTMSD3P303R2/D | ETC |
获取价格 |
FETKY? |
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NTMSD3P303R2_06 | ONSEMI |
获取价格 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
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