Datasheet > NTMT045N065SC1

NTMT045N065SC1

更新时间： 2024-11-19 11:13:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	513K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, Power88

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NTMT045N065SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

33 mohm, 650ꢀV, M2,

Power88

MAX

I MAX

DSS

DS(ON)

650 V

50 mW @ 18 V

55 A

NTMT045N065SC1

Features

• Typ. R

= 33 mW @ V = 18 V

= 45 mW @ V = 15 V

DS(on)

S1: Driver Source

S2: Power Source

Typ. R

DS(on)

S1 S2

• Ultra Low Gate Charge (Q

= 105 nC)

G(tot)

POWER MOSFET

• Low Effective Output Capacitance (C = 162 pF)

oss

• 100% Avalanche Tested

• T = 175°C

• RoHS Compliant

Typical Applications

• SMPS (Switching Mode Power Supplies)

• Solar Inverters

• UPS (Uninterruptable Power Supplies)

• Energy Storage

TDFN4 8x8 2P

CASE 520AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

DSS

045N

065SC1

AWLYWW

Gate−to−Source Voltage

−8/+22

−5/+18

Recommended Operation Val-

ues of Gate − Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Note 2)

187

Steady

State

045N065SC1

= Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

Power Dissipation

(Note 2)

Continuous Drain

Current (Notes 1, 2)

Steady

State

= 100°C

= 25°C

Power Dissipation

(Notes 1, 2)

ORDERING INFORMATION

Pulsed Drain Current (Note 3)

197

†

Device

NTMT045N065SC1

Package

Shipping

3000 /

Tape & Reel

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

TDFN4

(Pb−Free)

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I = 12 A , L = 1 mH) (Note 4)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Maximum Lead Temperature for Soldering,

1/8″ from Case for 10 Seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

3. Repetitive rating, limited by max junction temperature.

4. E of 72 mJ is based on starting T = 25°C; L = 1 mH, I = 12 A, V = 50 V,

= 18 V.

Publication Order Number:

January, 2023 − Rev. 1

NTMT045N065SC1/D

12 3 4 5 6 7 8

中文翻译

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