Datasheet > NTMTS001N06CLTXG

NTMTS001N06CLTXG

更新时间： 2023-09-03 20:39:29

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	360K
描述
Single N-Channel Power MOSFET 60V, 328A, 0.81mΩ

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NTMTS001N06CLTXG 数据手册

NTMTS001N06CL

Power MOSFET

60 V, 0.81 mW, 398.2 A, Single N−Channel

Features

• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• Power 88 Package, Industry Standard

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MAX

I MAX

(BR)DSS

DS(ON)

Compliant

0.81 mW @ 10 V

1.05 mW @ 4.5 V

60 V

398.2 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5−8)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

398.2

281.6

244

122

56.9

40.2

5.0

(Notes 1, 3)

Steady

State

G (1)

Power Dissipation

(Note 1)

= 100°C

S (2−4)

Continuous Drain

Current R

T = 25°C

N−CHANNEL MOSFET

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

2.5

Pulsed Drain Current

T = 25°C, t = 10 ms

900

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

203.4

887

POWER 88

CASE 507AP

Single Pulse Drain−to−Source Avalanche

Energy (I

= 30 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

MARKING DIAGRAM

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

XXXXXXXX

AWLYWW

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.614

30.1

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

XXX = Device Code

(8 A−N characters max)

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Publication Order Number:

January, 2019 − Rev. 1

NTMTS001N06CL/D

12 3 4 5 6 7

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与NTMTS001N06CLTXG相关器件

型号	品牌	获取价格	描述	数据表
NTMTS001N06CTXG	ONSEMI	获取价格	MOSFET, 60V Single N-Channel Power 88
NTMTS002N08MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 229A, 2.0m
NTMTS002N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 194 A, 2
NTMTS0D4N04CLTXG	ONSEMI	获取价格	单 N 沟道功率 MOSFET 40V，553.8A，0.4mΩ，PQFN 8x8
NTMTS0D4N04CTXG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，558A，0.45mΩ，PQFN 8x8
NTMTS0D6N04CLTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 554.5A, 0.
NTMTS0D6N04CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 533A, 0.48
NTMTS0D7N04CTXG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，0.67 mΩ，420 A
NTMTS0D7N06CLTXG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，A，0.68mΩ，PQFN 8x8
NTMTS0D7N06CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, A, 0.72mΩ,

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