Datasheet > NTMTS0D4N04CTXG

NTMTS0D4N04CTXG

更新时间： 2024-11-19 11:14:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	395K
描述
单 N 沟道，功率 MOSFET，40V，558A，0.45mΩ，PQFN 8x8

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NTMTS0D4N04CTXG 数据手册

MOSFET – Power, Single

N-Channel

40 V, 0.45 mW, 558 A

NTMTS0D4N04C

Features

www.onsemi.com

• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

• Power 88 Package, Industry Standard

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(BR)DSS

DS(ON)

40 V

0.45 mW @ 10 V

558 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5−8)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (1)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

558

394.8

244.0

122.0

79.8

56.4

5.0

(Notes 1, 3)

S (2−4)

Steady

State

Power Dissipation

N−CHANNEL MOSFET

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

2.5

Pulsed Drain Current

T = 25°C, t = 10 ms

900

DFNW8

CASE 507AP

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

203.4

4454

Single Pulse Drain−to−Source Avalanche

MARKING DIAGRAM

Energy (I

= 70 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

XXXXXXXX

AWLYWW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

XXX = Device Code

Parameter

Symbol

Value

0.61

Unit

(8 A−N characters max)

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Publication Order Number:

March, 2020 − Rev. 5

NTMTS0D4N04C/D

12 3 4 5 6 7

中文翻译

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与NTMTS0D4N04CTXG相关器件

型号	品牌	获取价格	描述	数据表
NTMTS0D6N04CLTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 554.5A, 0.
NTMTS0D6N04CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 533A, 0.48
NTMTS0D7N04CTXG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，0.67 mΩ，420 A
NTMTS0D7N06CLTXG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，A，0.68mΩ，PQFN 8x8
NTMTS0D7N06CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, A, 0.72mΩ,
NTMTS1D2N08H	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 335A, 1.1m
NTMTS1D5N08H	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 255A, 1.5m
NTMTS1D5N08MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 287A, 1.56
NTMTS1D6N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 273A, 1.7
NTMTS4D3N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 174A, 4.4

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