Datasheet > NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

更新时间： 2024-10-01 11:11:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	420K
描述
Single N-Channel Power MOSFET 100V, 367A, 1.7mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMTSC1D6N10MCTXG 数据手册

浏览型号NTMTSC1D6N10MCTXG的Datasheet PDF文件第2页

浏览型号NTMTSC1D6N10MCTXG的Datasheet PDF文件第3页

浏览型号NTMTSC1D6N10MCTXG的Datasheet PDF文件第4页

浏览型号NTMTSC1D6N10MCTXG的Datasheet PDF文件第5页

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

100 V, 1.7 mW, 267 A

MAX

I MAX

(BR)DSS

DS(ON)

100 V

1.7 mW @ 10 V

267 A

D (5−8)

NTMTSC1D6N10MC

Features

G (1)

• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (2−4)

• New Power 88 Dual Cool Package

N−CHANNEL MOSFET

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

TDFNW8

Gate−to−Source Voltage

CASE 507AS

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

267

189

291

145

(Notes 1, 3)

Steady

State

MARKING DIAGRAM

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.9

(Notes 1, 2)

1D6N10M AWLYW

T = 100°C

1.9

Pulsed Drain Current

T = 25°C, t = 10 ms

900

1D6N10M = Specific Device Code

= Assembly Location

WL = Wafer Lot Code

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

= Year Code

= Work Week Code

Source Current (Body Diode)

243

Single Pulse Drain−to−Source Avalanche

1550

Energy (I

= 22.3 A)

L(pk)

Lead Temperature for Soldering Purposes

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.5

Unit

Junction−to−Case − Bottom − Steady State

Junction−to−Case − Top − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

JCB

0.8

JCT

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

November, 2022 − Rev. 2

NTMTSC1D6N10MC/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTMTSC1D6N10MCTXG相关器件

型号	品牌	获取价格	描述	数据表
NTMTSC4D2N10GTXG	ONSEMI	获取价格	MOSFET Power, Single N-Channel, DFN8, 100V, 4
NTMTSC4D3N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMYS003N08LHTWG	ONSEMI	获取价格	Power Field-Effect Transistor
NTMYS006N08LHTWG	ONSEMI	获取价格	Power Field-Effect Transistor
NTMYS008N08LHTWG	ONSEMI	获取价格	Power Field-Effect Transistor
NTMYS010N04CLTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道
NTMYS011N04CTWG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，12 mΩ，35 A
NTMYS013N08LHTWG	ONSEMI	获取价格	Power MOSFET 80 V, 42A, 13.1mΩ Single N-Chann
NTMYS014N06CLTWG	ONSEMI	获取价格	功率 MOSFET，60V，42 A，14.5Ω，单 N 沟道
NTMYS020N08LHTWG	ONSEMI	获取价格	Power MOSFET 80 V, 30A, 19.5mΩ Single N-Chann

与NTMTSC1D6N10MCTXG相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

29
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

24
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

25
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG 数据手册

与NTMTSC1D6N10MCTXG相关器件

与NTMTSC1D6N10MCTXG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG 数据手册

与NTMTSC1D6N10MCTXG相关器件

与NTMTSC1D6N10MCTXG相关文章

您还可以找

您在本页遇到什么问题？