NTMYS014N06CL
Power MOSFET
60 V, 15 mW, 37 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• LFPAK4 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
15 mW @ 10 V
60 V
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
37 A
J
21.5 mW @ 4.5 V
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D (5)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
36
A
C
D
q
JC
T
C
21
(Notes 1, 2, 3)
Power Dissipation
T
C
P
37
W
A
G (4)
D
R
(Notes 1, 2)
q
JC
T
C
= 100°C
12
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
12
q
JA
T = 100°C
A
8.4
3.8
1.9
185
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1 & 2)
MARKING
DIAGRAM
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
p
D
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
014N06
CL
AWLYW
Source Current (Body Diode)
I
31
65
A
S
LFPAK4
CASE 760AB
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, I
= 1.6 A)
J
L(pk)
1
S
S
S
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
014N06CL = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.1
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2019 − Rev. 0
NTMYS014N06CL/D