Datasheet > NTMTSC002N10MCTXG

NTMTSC002N10MCTXG

更新时间： 2024-11-19 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	267K
描述
Single N-Channel Power MOSFET 100V, 236A, 2.0mΩ

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DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

100 V, 2.0 mW, 236 A

MAX

I MAX

(BR)DSS

DS(ON)

100 V

2.0 mW @ 10 V

236 A

D (5−8)

NTMTSC002N10MC

Features

• Small Footprint (8x8 mm) for Compact Design

G (1)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (2−4)

• New Power 88 Dual Cool Package

• These Devices are Pb−Free and are RoHS Compliant

N−CHANNEL MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

Gate−to−Source Voltage

TDFNW8

CASE 507AN

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

236

167

255

128

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

MARKING DIAGRAM

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.9

(Notes 1, 2)

T = 100°C

1.9

002N10M AWLYW

Pulsed Drain Current

T = 25°C, t = 10 ms

900

002N10M = Specific Device Code

= Assembly Location

WL = Wafer Lot Code

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

Source Current (Body Diode)

213

= Year Code

= Work Week Code

Single Pulse Drain−to−Source Avalanche

2223

Energy (I

= 18.2 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.6

Unit

Junction−to−Case, Bottom − Steady State

Junction−to−Case, Top − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

JCB

0.9

JCT

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

September, 2021 − Rev. 1

NTMTSC002N10MC/D

12 3 4 5 6 7

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