Datasheet > NTMTS0D7N04CTXG

NTMTS0D7N04CTXG

更新时间： 2024-11-22 11:14:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	359K
描述
功率 MOSFET，单 N 沟道，40 V，0.67 mΩ，420 A

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NTMTS0D7N04CTXG 数据手册

MOSFET – Power, Single

N-Channel

40 V, 0.67 mW, 420 A

NTMTS0D7N04C

Features

• Small Footprint (8x8 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• Power 88 Package, Industry Standard

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

40 V

0.67 mW @ 10 V

420 A

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5−8)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

420

297

205

103

G (1)

(Notes 1, 3)

Steady

State

Power Dissipation

S (2−4)

(Note 1)

= 100°C

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

4.9

2.5

900

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

DFNW8

TX SUFFIX

CASE 507AP

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

171

Single Pulse Drain−to−Source Avalanche

1446

MARKING DIAGRAM

Energy (I

= 40 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

XXXXXXXX

AWLYWW

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.73

Unit

XXX = Device Code

(8 A−N characters max)

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

= Assembly Location

30.4

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Publication Order Number:

October, 2020 − Rev. 6

NTMTS0D7N04C/D

12 3 4 5 6 7

中文翻译

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与NTMTS0D7N04CTXG相关器件

型号	品牌	获取价格	描述	数据表
NTMTS0D7N06CLTXG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，A，0.68mΩ，PQFN 8x8
NTMTS0D7N06CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, A, 0.72mΩ,
NTMTS1D2N08H	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 335A, 1.1m
NTMTS1D5N08H	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 255A, 1.5m
NTMTS1D5N08MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 287A, 1.56
NTMTS1D6N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 273A, 1.7
NTMTS4D3N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMTS6D0N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 135A, 6.4
NTMTSC002N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 236A, 2.0
NTMTSC1D5N08MC	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, DFNW8, DUAL

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