5秒后页面跳转
NTMTS1D5N08MC PDF预览

NTMTS1D5N08MC

更新时间: 2024-11-19 11:14:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 408K
描述
Single N-Channel Power MOSFET 80V, 287A, 1.56mΩ, PQFN 8x8

NTMTS1D5N08MC 数据手册

 浏览型号NTMTS1D5N08MC的Datasheet PDF文件第2页浏览型号NTMTS1D5N08MC的Datasheet PDF文件第3页浏览型号NTMTS1D5N08MC的Datasheet PDF文件第4页浏览型号NTMTS1D5N08MC的Datasheet PDF文件第5页浏览型号NTMTS1D5N08MC的Datasheet PDF文件第6页浏览型号NTMTS1D5N08MC的Datasheet PDF文件第7页 
MOSFET - Power, Single  
N-Channel, DFNW8  
80 V, 1.56 mW, 287 A  
NTMTS1D5N08MC  
Features  
www.onsemi.com  
Small Footprint (8x8 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
1.56 mW @ 10 V  
4.0 mW @ 6 V  
Compliant  
80 V  
287 A  
Typical Applications  
Power Tools, Battery Operated Vacuums  
UAV/Drones, Material Handling  
BMS/Storage, Home Automation  
D (58)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G (1)  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
S (24)  
GatetoSource Voltage  
V
GS  
20  
V
NCHANNEL MOSFET  
Continuous Drain  
T
= 25°C  
I
287  
A
C
D
Current R  
(Note 2)  
q
JC  
Steady  
State  
Power Dissipation  
(Note 2)  
P
250  
33  
W
A
D
R
q
JC  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
Steady  
State  
(Notes 1, 2)  
Power Dissipation  
P
3.3  
W
D
R
(Notes 1, 2)  
q
JA  
DFNW8  
CASE 507AP  
Pulsed Drain Current  
T
= 25°C, t = 10 ms  
I
DM  
3500  
A
C
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+150  
°C  
J
stg  
MARKING DIAGRAM  
Single Pulse DraintoSource Avalanche  
E
AS  
1441  
mJ  
Energy (I  
= 31 A, L = 3 mH)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
1D5N08MC  
AWLYWW  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
1D5N08MC = Device Code  
= Assembly Location  
WL = 2digit Wafer Lot Code  
= Year Code  
WW = Work Week Code  
Parameter  
Symbol  
Value  
0.5  
Unit  
A
JunctiontoCase Steady State (Note 2)  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
Y
R
38  
q
JA  
2
1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
June, 2020 Rev. 1  
NTMTS1D5N08MC/D  
 

与NTMTS1D5N08MC相关器件

型号 品牌 获取价格 描述 数据表
NTMTS1D6N10MCTXG ONSEMI

获取价格

Single N-Channel Power MOSFET 100V, 273A, 1.7
NTMTS4D3N15MC ONSEMI

获取价格

Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMTS6D0N15MC ONSEMI

获取价格

Single N-Channel Power MOSFET 150V, 135A, 6.4
NTMTSC002N10MCTXG ONSEMI

获取价格

Single N-Channel Power MOSFET 100V, 236A, 2.0
NTMTSC1D5N08MC ONSEMI

获取价格

MOSFET - Power, Single N-Channel, DFNW8, DUAL
NTMTSC1D6N10MCTXG ONSEMI

获取价格

Single N-Channel Power MOSFET 100V, 367A, 1.7
NTMTSC4D2N10GTXG ONSEMI

获取价格

MOSFET Power, Single N-Channel, DFN8, 100V, 4
NTMTSC4D3N15MC ONSEMI

获取价格

Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMYS003N08LHTWG ONSEMI

获取价格

Power Field-Effect Transistor
NTMYS006N08LHTWG ONSEMI

获取价格

Power Field-Effect Transistor