Datasheet > NTMTS1D5N08H

NTMTS1D5N08H

更新时间： 2024-10-01 11:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	472K
描述
Single N-Channel Power MOSFET 80V, 255A, 1.5mΩ, PQFN 8x8

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NTMTS1D5N08H 数据手册

MOSFET - Power, Single

N-Channel

80 V, 1.5 mW, 255 A

NTMTS1D5N08H

Features

www.onsemi.com

• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free and are RoHS Compliant

80 V

1.5 mW @ 10 V

255 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5−8)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

255

162

208

G (1)

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

S (2−4)

= 100°C

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

4.2

1.7

900

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

Source Current (Body Diode)

173

DFNW8

CASE 507AP

Single Pulse Drain−to−Source Avalanche

1536

Energy (L = 3 mH, I

= 32 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

MARKING DIAGRAM

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1D5N08H

AWLYWW

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.6

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Publication Order Number:

July, 2020 − Rev. 1

NTMTS1D5N08H/D

12 3 4 5 6 7

中文翻译

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与NTMTS1D5N08H相关器件

型号	品牌	获取价格	描述	数据表
NTMTS1D5N08MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 287A, 1.56
NTMTS1D6N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 273A, 1.7
NTMTS4D3N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMTS6D0N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 135A, 6.4
NTMTSC002N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 236A, 2.0
NTMTSC1D5N08MC	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, DFNW8, DUAL
NTMTSC1D6N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 367A, 1.7
NTMTSC4D2N10GTXG	ONSEMI	获取价格	MOSFET Power, Single N-Channel, DFN8, 100V, 4
NTMTSC4D3N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMYS003N08LHTWG	ONSEMI	获取价格	Power Field-Effect Transistor

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