Datasheet > NTMTS0D7N06CLTXG

NTMTS0D7N06CLTXG

更新时间： 2024-11-22 11:14:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	397K
描述
单 N 沟道，功率 MOSFET，60V，A，0.68mΩ，PQFN 8x8

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NTMTS0D7N06CLTXG 数据手册

MOSFET - Power, Single

N-Channel

60 V, 0.68 mW, 477 A

NTMTS0D7N06CL

Features

www.onsemi.com

• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• Power 88 Package, Industry Standard

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

0.68 mW @ 10 V

0.90 mW @ 4.5 V

60 V

477 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5−8)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (1)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

477

337.6

294.6

147.3

62.2

44.0

5.0

(Notes 1, 3)

Steady

State

S (2−4)

Power Dissipation

N−CHANNEL MOSFET

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

2.5

Pulsed Drain Current

T = 25°C, t = 10 ms

900

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

DFNW8

CASE 507AP

Source Current (Body Diode)

245.5

1754

Single Pulse Drain−to−Source Avalanche

Energy (I

= 40 A)

L(pk)

MARKING DIAGRAM

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

XXXXXXXX

AWLYWW

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.5

Unit

XXX = Device Code

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

(8 A−N characters max)

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Publication Order Number:

October, 2020 − Rev. 3

NTMTS0D7N06CL/D

12 3 4 5 6 7

中文翻译

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与NTMTS0D7N06CLTXG相关器件

型号	品牌	获取价格	描述	数据表
NTMTS0D7N06CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, A, 0.72mΩ,
NTMTS1D2N08H	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 335A, 1.1m
NTMTS1D5N08H	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 255A, 1.5m
NTMTS1D5N08MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 287A, 1.56
NTMTS1D6N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 273A, 1.7
NTMTS4D3N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 174A, 4.4
NTMTS6D0N15MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 150V, 135A, 6.4
NTMTSC002N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 236A, 2.0
NTMTSC1D5N08MC	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, DFNW8, DUAL
NTMTSC1D6N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 367A, 1.7

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