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NTMTS0D7N06CTXG PDF预览

NTMTS0D7N06CTXG

更新时间: 2024-11-19 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 383K
描述
Single N-Channel Power MOSFET 60V, A, 0.72mΩ, PQFN 8x8

NTMTS0D7N06CTXG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, TDFNW8  
60 V, 0.72 mW, 464 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
60 V  
0.72 mW @ 10 V  
464 A  
D (58)  
NTMTS0D7N06C  
Features  
Small Footprint (8x8 mm) for Compact Design  
G (1)  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
S (24)  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
NCHANNEL MOSFET  
Compliant  
Typical Applications  
Power Tools, Battery Operated Vacuums  
UAV/Drones, Material Handling  
BMS/Storage, Home Automation  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
TDFNW8  
CASE 507AP  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
464  
A
C
D
MARKING DIAGRAM  
Current R  
(Note 2)  
q
JC  
T
C
328.1  
294.6  
147.3  
60.5  
42.7  
5.0  
Power Dissipation  
(Note 2)  
T
C
P
W
A
D
R
q
JC  
0D7N06C  
AWLYWW  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
q
JA  
T = 100°C  
A
(Notes 1, 2)  
A
= Assembly Location  
Power Dissipation  
T = 25°C  
A
P
W
D
WL = 2digit Wafer Lot Code  
= Year Code  
WW = Work Week Code  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
2.5  
Y
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
900  
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
J
stg  
+175  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Source Current (Body Diode)  
I
S
245.5  
1754  
A
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 40 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.5  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 1)  
R
°C/W  
q
JC  
R
30  
q
JA  
2
1. Surfacemounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
October, 2022 Rev. 4  
NTMTS0D7N06C/D  
 

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