DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, TDFNW8
60 V, 0.72 mW, 464 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
60 V
0.72 mW @ 10 V
464 A
D (5−8)
NTMTS0D7N06C
Features
• Small Footprint (8x8 mm) for Compact Design
G (1)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (2−4)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
N−CHANNEL MOSFET
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
TDFNW8
CASE 507AP
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Steady
State
T
= 25°C
= 100°C
= 25°C
I
464
A
C
D
MARKING DIAGRAM
Current R
(Note 2)
q
JC
T
C
328.1
294.6
147.3
60.5
42.7
5.0
Power Dissipation
(Note 2)
T
C
P
W
A
D
R
q
JC
0D7N06C
AWLYWW
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
T = 100°C
A
(Notes 1, 2)
A
= Assembly Location
Power Dissipation
T = 25°C
A
P
W
D
WL = 2−digit Wafer Lot Code
= Year Code
WW = Work Week Code
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.5
Y
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
900
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Source Current (Body Diode)
I
S
245.5
1754
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 40 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.5
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
30
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2022 − Rev. 4
NTMTS0D7N06C/D