Datasheet > NTMT100N60S5H

NTMT100N60S5H

更新时间： 2023-09-03 20:36:50

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	308K
描述
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 27 A, 100 mΩ, Power88

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NTMT100N60S5H 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single,

N-Channel, SUPERFET⁾,

FAST, PQFN4

MAX

I MAX

DSS

DS(ON)

600 V

100 mW @ 10 V

27 A

600 V, 100 mW, 27 A

NTMT100N60S5H

Description

The SUPERFET V MOSFET FAST series helps maximize system

efficiency by the extremely low switching losses in hard switching

application. The Power88 package which is an ultraslim SMD

package offers excellent switching performance by providing kelvin

source configuration and lower parasitic source inductance.

S1: Driver Source

S2: Power Source

S1 S2

N−Channel MOSFET

Features

• 650 V @ T = 150°C

• Typ. R

= 80 mW

DS(on)

• 100% Avalanche Tested

• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Power88

PQFN4 8x8, 2P

CASE 520AB

Applications

• Telecom / Server Power Supplies

• EV Charger / UPS / Solar / Industrial Power Supplies

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

NTMT100

N60S5H

AWLYWW

DSS

600

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

NTMT100N60S5H = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

Power Dissipation

179

Pulsed Drain Current (Note 1)

= Work Week

Pulsed Source Current

(Body Diode) (Note 1)

Operating Junction and Storage Temperature T , T

−55 to

+150

°C

STG

Range

ORDERING INFORMATION

Source Current (Body Diode)

†

Device

Package

Shipping

Single Pulse Avalanche

Energy

I = 5.1 A,

230

= 25 W

NTMT100N60S5H

PQFN4

3000 / Tape &

Reel

Avalanche Current

5.1

1.79

120

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 13.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

August, 2022 − Rev. 0

NTMT100N60S5H/D

12 3 4 5 6 7...9

中文翻译

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与NTMT100N60S5H相关器件

型号	品牌	获取价格	描述	数据表
NTMT110N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT125N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT125N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT150N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT185N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT190N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT190N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT280N60S5Z	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, Easy Dr
NTMTS001N06CLTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, 328A, 0.81
NTMTS001N06CTXG	ONSEMI	获取价格	MOSFET, 60V Single N-Channel Power 88

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