Datasheet > NTMT280N60S5Z

NTMT280N60S5Z

更新时间： 2024-11-19 11:15:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	403K
描述
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, Power88

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www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾,

EASY with Zener Diode,

PQFN88-4L

600 V, 280 mW, 13 A

MAX

I MAX

(BR)DSS

DS(ON)

600 V

280 mW @ V = 10 V

13 A

N−CHANNEL MOSFET

NTMT280N60S5Z

Description

SUPERFET V MOSFET Easy Drive series combines excellent

switching performance without sacrificing ease of use and EMI issues

for both hard and soft switching topologies. The Power88 package

which is an ultraslim SMD package offers excellent switching

performance by providing kelvin source configuration and lower

parasitic source inductance.

Features

 650 V @ T = 150C

 Typ. R

= 224 mW

DS(on)

 100% Avalanche Tested

 Pb−Free, Halogen Free / BFR Free and are RoHS Compliant

Applications

TDFN4 8x8 2P

CASE 520AB

 Computing / Display Power Supplies

 Telecom / Server Power Supplies

 Lighting / Charger / Adapter / Industrial Power Supplies

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

20

Unit

NTMT280

N60S5Z

AWLYWW

DSS

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25C

= 100C

= 25C

NTMT280N60S5Z = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

Power Dissipation

Pulsed Drain Current (Note 1)

= Work Week

Pulsed Source Current (Body

Diode) (Note 1)

Operating Junction and Storage Temperature T , T

−55 to

+150

C

STG

Range

ORDERING INFORMATION

Source Current (Body Diode)

†

Device

NTMT280N60S5Z

Package

Shipping

Single Pulse Avalanche

Energy

I = 2.9 A

= 25 W

TDFN4

3000 / Tape &

Reel

Avalanche Current

2.9

0.89

120

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8 from case for 10 seconds)

260

C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I  5.5 A, di/dt  200 A/s, V  400 V, starting T = 25C.

 Semiconductor Components Industries, LLC, 2022

Publication Order Number:

November, 2022 − Rev. 0

NTMT280N60S5Z/D

12 3 4 5 6 7

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与NTMT280N60S5Z相关器件

型号	品牌	获取价格	描述	数据表
NTMTS001N06CLTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, 328A, 0.81
NTMTS001N06CTXG	ONSEMI	获取价格	MOSFET, 60V Single N-Channel Power 88
NTMTS002N08MC	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 229A, 2.0m
NTMTS002N10MCTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 194 A, 2
NTMTS0D4N04CLTXG	ONSEMI	获取价格	单 N 沟道功率 MOSFET 40V，553.8A，0.4mΩ，PQFN 8x8
NTMTS0D4N04CTXG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，558A，0.45mΩ，PQFN 8x8
NTMTS0D6N04CLTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 554.5A, 0.
NTMTS0D6N04CTXG	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 533A, 0.48
NTMTS0D7N04CTXG	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，40 V，0.67 mΩ，420 A
NTMTS0D7N06CLTXG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，60V，A，0.68mΩ，PQFN 8x8

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