Datasheet > NTMT125N60S5H

NTMT125N60S5H

更新时间： 2023-09-03 20:37:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	272K
描述
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 22 A, 125 mΩ, Power88

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NTMT125N60S5H 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾,

FAST, TDFN4

MAX

I MAX

(BR)DSS

DS(ON)

600 V

125 mW @ 10 V

22 A

N−CHANNEL MOSFET

600 V, 125 mW, 22 A

NTMT125N60S5H

Description

The SUPERFET V MOSFET FAST series helps maximize system

efficiency by the extremely low switching losses in hard switching

application. The TDFN4 package which is an ultra slim SMD package

offers excellent switching performance by providing kelvin source

configuration and lower parasitic source inductance.

Features

S1: Driver Source

S2: Power Source

S1 S2

• 650 V @ T = 150°C / Typ. R

= 100 mW

DS(on)

• 100% Avalanche Tested

• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant

Applications

TDFN4

CASE 520AB

• Telecom / Server Power Supplies

• EV Charger / UPS / Solar / Industrial Power Supplies

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

MARKING DIAGRAM

DSS

GSS

Gate−to−Source Voltage

AC (f > 1 Hz)

NTMT125

N60S5H

AWLYWW

Continuous Drain Current

= 25°C

= 100°C

= 25°C

Power Dissipation

152

Pulsed Drain Current (Note 1)

NTMT125N60S5H = Specific Device Code

Pulsed Source Current (Body

Diode) (Note 1)

= Assembly Location

= Wafer Lot

= Year

Operating Junction and Storage Temperature T , T

Range

−55 to

+150

°C

STG

= Work Week

Source Current (Body Diode)

Single Pulse Avalanche

Energy

I = 4.5 A

184

ORDERING INFORMATION

= 25 W

†

Avalanche Current

4.5

1.52

120

Device

Package

Shipping

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

NTMT125N60S5H

TDFN4

3000 / Tape &

Reel

dv/dt

V/ns

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 11 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

October, 2022 − Rev. 0

NTMT125N60S5H/D

12 3 4 5 6 7

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与NTMT125N60S5H相关器件

型号	品牌	获取价格	描述	数据表
NTMT125N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT150N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT185N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT190N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
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NTMT280N60S5Z	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, Easy Dr
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NTMTS001N06CTXG	ONSEMI	获取价格	MOSFET, 60V Single N-Channel Power 88
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