Datasheet > NTMT061N60S5H

NTMT061N60S5H

更新时间： 2024-11-19 11:11:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	278K
描述
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 40 A, 61 mΩ, Power88

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NTMT061N60S5H 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾V,

FAST, QFN88-4L

MAX

I MAX

(BR)DSS

DS(ON)

600 V

61 mW @ V = 10 V

40 A

N−CHANNEL MOSFET

600 V, 61 mW, 41 A

NTMT061N60S5H

Description

The SUPERFET V MOSFET FAST series helps maximize system

efficiency by the extremely low switching losses in hard switching

application. The Power88 package which is an ultraslim SMD

package offers excellent switching performance by providing kelvin

source configuration and lower parasitic source inductance.

S1: Driver Source

S2: Power Source

S1 S2

Features

• 650 V @ T = 150°C

• Typ. R

= 48.8 mW

• 100% Avalanche Tested

DS(on)

• Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Applications

• Telecom / Server Power Supplies

• EV Charger / UPS / Solar / Industrial Power Supplies

TDFN4

CASE 520AB

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

DSS

GSS

NTMT061

N60S5H

AWLYWW

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

NTMT061N60S5H = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

Power Dissipation

250

144

Pulsed Drain Current (Note 1)

= Work Week

Pulsed Source Current

(Body Diode) (Note 1)

Operating Junction and Storage Temperature T , T

−55 to

+150

°C

STG

Range

ORDERING INFORMATION

Source Current (Body Diode)

†

Device

NTMT061N60S5H

Package

Shipping

Single Pulse Avalanche

Energy

I = 6.7 A,

376

TDFN4

3000 / Tape &

Reel

= 25 W

Avalanche Current

6.7

2.5

120

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 20.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

October, 2022 − Rev. 1

NTMT061N60S5H/D

12 3 4 5 6 7

中文翻译

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与NTMT061N60S5H相关器件

型号	品牌	获取价格	描述	数据表
NTMT064N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT080N60S5	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, Easy Dr
NTMT090N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT095N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT100N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT110N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT125N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT125N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT150N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT185N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6

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