Datasheet > NTMT080N60S5

NTMT080N60S5

更新时间： 2024-11-19 11:13:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	386K
描述
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 40 A, 80 mΩ, Power88

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMT080N60S5 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾,

EASY, PQFN88-4L

600 V, 80 mW, 40 A

MAX

I MAX

(BR)DSS

DS(ON)

600 V

80 mW @ V = 10 V

40 A

N−CHANNEL MOSFET

NTMT080N60S5

Description

SUPERFET V MOSFET Easy Drive series combines excellent

switching performance without sacrificing ease of use and EMI issues

for both hard and soft switching topologies. The Power88 package

which is an ultraslim SMD package offers excellent switching

performance by providing kelvin source configuration and lower

parasitic source inductance.

S1: Driver Source

S2: Power Source

S1 S2

Features

 650 V @ T = 150C

 Typ. R

 100% Avalanche Tested

= 64 mW

DS(on)

TDFN4 8x8 2P

CASE 520AB

 Pb−Free, Halogen Free / BFR Free and are RoHS Compliant

Applications

 Telecom / Server Power Supplies

 EV Charger / UPS / Solar / Industrial Power Supplies

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

30

Unit

DSS

NTMT080

N60S5

AWLYWW

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25C

= 100C

= 25C

NTMT080N60S5 = Specific Device Code

Power Dissipation

212

116

= Assembly Location

= Wafer Lot

= Year

Pulsed Drain Current (Note 1)

Pulsed Source Current (Body

Diode) (Note 1)

= Work Week

Operating Junction and Storage Temperature T , T

−55 to

+150

C

STG

Range

ORDERING INFORMATION

Source Current (Body Diode)

†

Device

NTMT080N60S5

Package

Shipping

Single Pulse Avalanche

Energy

I = 5.8 A

287

= 25 W

TDFN4

3000 / Tape &

Reel

Avalanche Current

5.8

2.12

120

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8 from case for 10 seconds)

260

C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I  16.5 A, di/dt  200 A/s, V  400 V, starting T = 25C.

 Semiconductor Components Industries, LLC, 2022

Publication Order Number:

November, 2022 − Rev. 0

NTMT080N60S5/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTMT080N60S5相关器件

型号	品牌	获取价格	描述	数据表
NTMT090N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT095N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT100N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT110N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT125N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT125N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT150N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT185N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT190N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT190N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET

与NTMT080N60S5相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMT080N60S5

NTMT080N60S5 数据手册

与NTMT080N60S5相关器件

与NTMT080N60S5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMT080N60S5

NTMT080N60S5 数据手册

与NTMT080N60S5相关器件

与NTMT080N60S5相关文章

您还可以找

您在本页遇到什么问题？