Datasheet > NTMT061N60S5F

NTMT061N60S5F

更新时间： 2024-11-22 11:14:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	393K
描述
Power MOSFET, N-Channel, SUPERFET® V, FRFET®, 600 V, 61 mΩ, 41 A, Power88

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMT061N60S5F 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾V,

FRFET⁾, TDFN4

600 V, 61 mW, 41 A

MAX

I MAX

DSS

DS(ON)

600 V

61 mW @ 10 V

41 A

NTMT061N60S5F

Description

The SUPERFET V MOSFET FRFET series, optimized reverse

recovery performance of body diode, can remove additional component

and improve system reliability for soft switching applications such as

PSFB and LLC. The Power88 package which is an ultra−slim SMD

package offers excellent switching performance by providing kelvin

source configuration and lower parasitic source inductance.

Features

S1: Driver Source

S2: Power Source

S1 S2

POWER MOSFET

• 650 V @ T = 150°C / Typ. R

= 48.8 mW

DS(on)

• 100% Avalanche Tested / MSL1 Qualified

• Kelvin Source Configuration and Low Parasitic Source Inductance

• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Computing / Display Power Supplies

TDFN4 8x8 2P

CASE 520AB

• Telecom / Server Power Supplies

• Lighting / Charger/ Adapter / Industrial Power Supplies

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

DSS

GSS

NTMT061

N60S5F

Gate−to−Source Voltage

AWLYWW

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

NTMT061N60S5F = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

Power Dissipation

255

146

Pulsed Drain Current (Note 1)

= Work Week

Pulsed Source Current

(Body Diode) (Note 1)

Operating Junction and Storage Temperature T , T

−55 to

+150

°C

STG

Range

ORDERING INFORMATION

Source Current (Body Diode)

Device

Package

Shipping

3000 / Tape &

Reel

Single Pulse Avalanche

Energy

I = 6.7 A,

376

NTMT061N60S5F

TDFN4

= 25 W

Avalanche Current

6.7

2.55

120

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 20.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

October, 2022 − Rev. 2

NTMT061N60S5F/D

12 3 4 5 6 7...9

中文翻译

下载PDF

与NTMT061N60S5F相关器件

型号	品牌	获取价格	描述	数据表
NTMT061N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT064N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT080N60S5	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, Easy Dr
NTMT090N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT095N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT100N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT110N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET
NTMT125N60S5H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, FAST, 6
NTMT125N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTMT150N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET

与NTMT061N60S5F相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMT061N60S5F

NTMT061N60S5F 数据手册

与NTMT061N60S5F相关器件

与NTMT061N60S5F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMT061N60S5F

NTMT061N60S5F 数据手册

与NTMT061N60S5F相关器件

与NTMT061N60S5F相关文章

您还可以找

您在本页遇到什么问题？