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NTMSD3P303R2_06

更新时间： 2024-02-24 11:24:20
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
9页 203K
描述
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

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NTMSD3P303R2_06 数据手册

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NTMSD3P303R2  
FETKY™  
P−Channel Enhancement−Mode  
Power MOSFET and Schottky Diode  
Dual SO−8 Package  
Features  
http://onsemi.com  
• High Efficiency Components in a Single SO−8 Package  
• High Density Power MOSFET with Low R  
,
DS(on)  
MOSFET  
−3.05 AMPERES  
−30 VOLTS  
Schottky Diode with Low V  
F
• Independent Pin−Outs for MOSFET and Schottky Die  
Allowing for Flexibility in Application Use  
• Less Component Placement for Board Space Savings  
• SO−8 Surface Mount Package,  
0.085 W @ V = −10 V  
GS  
SCHOTTKY DIODE  
3.0 AMPERES  
30 VOLTS  
Mounting Information for SO−8 Package Provided  
• Pb−Free Package is Available  
Applications  
420 mV @ I = 3.0 A  
F
• DC−DC Converters  
• Low Voltage Motor Control  
1
2
8
7
• Power Management in Portable and Battery−Powered Products, i.e.:  
A
A
S
G
C
C
D
D
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
6
3
Rating  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
V
V
−30  
"20  
V
V
4
5
DSS  
GS  
(TOP VIEW)  
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
171  
0.73  
−2.34  
−1.87  
−8.0  
°C/W  
W
ꢀ
JA  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Total Power Dissipation @ T = 25°C  
P
D
A
Continuous Drain Current @ T = 25°C  
I
I
A
A
D
D
Continuous Drain Current @ T = 70°C  
A
A
C
C
D
D
A
Pulsed Drain Current (Note 4)  
I
8
DM  
8
Thermal Resistance −  
E3P303  
AYWW G  
G
1
Junction−to−Ambient (Note 2)  
R
100  
1.25  
−3.05  
−2.44  
−12  
°C/W  
W
ꢀ
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
SO−8  
CASE 751  
STYLE 18  
Continuous Drain Current @ T = 25°C  
I
I
A
A
D
D
Continuous Drain Current @ T = 70°C  
A
A
A
1
Pulsed Drain Current (Note 4)  
I
DM  
A
A
S
G
Thermal Resistance −  
Junction−to−Ambient (Note 3)  
R
P
62.5  
2.0  
−3.86  
−3.10  
−15  
−55 to  
+150  
°C/W  
W
E3P303 = Device Code  
ꢀ
JA  
Total Power Dissipation @ T = 25°C  
A
D
D
D
A
Y
WW  
G
= Assembly Location  
= Year  
Continuous Drain Current @ T = 25°C  
I
I
A
A
Continuous Drain Current @ T = 70°C  
A
A
= Work Week  
Pulsed Drain Current (Note 4)  
I
A
DM  
= Pb−Free Package  
Operating and Storage  
Temperature Range  
T , T  
J
°C  
stg  
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche  
E
140  
mJ  
AS  
Energy − Starting T = 25°C  
J
ORDERING INFORMATION  
(V = −30 Vdc, V = −4.5 Vdc,  
DD  
GS  
Peak I = −7.5 Apk, L = 5 mH, R = 25 ꢁ)  
L
G
†
Device  
Package  
Shipping  
Maximum Lead Temperature for Soldering  
T
260  
°C  
L
Purposes, 1/8″ from case for 10 seconds  
NTMSD3P303R2  
SO−8  
2500/Tape & Reel  
2500/Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Minimum FR−4 or G−10 PCB, Steady State.  
NTMSD3P303R2G  
SO−8  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Mounted onto a 2″ square FR−4 Board  
(1in sq, 2 oz Cu 0.06″ thick single sided), Steady State.  
3. Mounted onto a 2″ square FR−4 Board  
(1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.  
4. Pulse Test: Pulse Width = 300 ꢂ s, Duty Cycle = 2%.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
NTMSD3P303R2/D  
1234567...9

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