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NTMSD6N303R2SG PDF预览

NTMSD6N303R2SG

更新时间： 2024-11-18 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
11页 223K
描述
Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKY

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中文翻译

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NTMSD6N303R2SG 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：SOT
包装说明：ROHS COMPLIANT, CASE 751-07, SOIC-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.36Is Samacsys：N
雪崩能效等级（Eas）：325 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.032 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：3
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
最大脉冲漏极电流 (IDM)：30 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTMSD6N303R2SG 数据手册

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NTMSD6N303R2  
Power MOSFET  
6 Amps, 30 Volts  
N−Channel SO−8 FETKYt  
The FETKY product family incorporates low R  
MOSFETs  
DS(on)  
http://onsemi.com  
packaged with an industry leading, low forward drop, low leakage  
Schottky Barrier rectifier to offer high efficiency components in a  
space saving configuration. Independent pinouts for MOSFET and  
Schottky die allow the flexibility to use a single component for  
switching and rectification functions in a wide variety of applications.  
MOSFET  
6.0 AMPERES  
30 VOLTS  
24 mW @ V = 10 V (Typ)  
GS  
Features  
SCHOTTKY DIODE  
6.0 AMPERES  
30 VOLTS  
• Pb−Free Packages are Available  
Applications  
420 mV @ I = 3.0 A  
F
• Buck Converter  
• Buck−Boost  
1
2
8
7
A
A
S
G
C
C
D
D
• Synchronous Rectification  
• Low Voltage Motor Control  
• Battery Packs  
6
3
4
5
• Chargers  
• Cell Phones  
(TOP VIEW)  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
MOSFET MAXIMUM RATINGS  
(T = 25°C unless otherwise noted) (Note 1)  
J
C
C
D
D
8
8
Rating  
Symbol  
Value  
Unit  
E6N3x  
AYWW G  
G
1
Drain−to−Source Voltage  
V
DSS  
30  
30  
Vdc  
Vdc  
Vdc  
SO−8  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
GS  
CASE 751  
STYLE 18  
Gate−to−Source Voltage − Continuous  
V
GS  
"20  
1
A
A
S
G
Drain Current − (Note 2)  
− Continuous @ T = 25°C  
I
6.0  
30  
Adc  
Apk  
A
D
E6N3 = Device Code  
− Single Pulse (tp ≤ 10 ms)  
I
DM  
x
= Blank or S  
Total Power Dissipation @ T = 25°C  
P
D
2.0  
Watts  
A
A
Y
= Assembly Location  
= Year  
(Note 2)  
Single Pulse Drain−to−Source Avalanche  
E
AS  
325  
mJ  
WW  
G
= Work Week  
= Pb−Free Package  
Energy − Starting T = 25°C  
J
GS  
(V = 30 Vdc, V = 5.0 Vdc,  
DD  
DS  
(Note: Microdot may be in either location)  
V
= 20 Vdc, I = 9.0 Apk,  
L
L = 10 mH, R = 25 W)  
G
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.  
†
Device  
Package  
Shipping  
NTMSD6N303R2  
NTMSD6N303R2G  
SO−8  
2500/Tape & Reel  
2500/Tape & Reel  
2. Mounted on 2″ square FR4 board  
SO−8  
(1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max.  
(Pb−Free)  
NTMSD6N303R2SG  
SO−8  
2500/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
NTMSD6N303R2/D  
1234567...11

中文翻译

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NTMSD6N303R2SG 替代型号

型号 品牌 替代类型 描述 数据表
NTMSD6N303R2G ONSEMI

类似代替

 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKY
NTMSD6N303R2 ONSEMI

类似代替

 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKY

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